CORPORATION
G
I
8550
Description
Features
PNP EPITAXIAL TRANSISTOR
ISSUED DATE :2005/05/06
REVISED DATE :
The G
I
8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.
*High Collector current (IC: 1.5A)
*Complementary to G
I
8050
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0.45
0.60
0.90
1.50
5.40
5.80
Absolute Maximum Ratings
(Ta = 25 :
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current
Base Current
Junction Temperature
Storage Temperature Range
Total Power Dissipation
,unless otherwise specified)
Symbol
Ratings
V
CBO
-40
V
CEO
-25
V
EBO
-6
I
C
-1.5
I
B
-0.5
Tj
+150
Ts
TG
-55 ~ +150
P
D
1.25
Unit
V
V
V
A
A
W
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
fT
Cob
Min.
-40
-25
-6
-
-
-
-
-
45
120
40
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
9
,unless otherwise specified)
Max.
Unit
-
V
-
V
-
V
-100
nA
-100
nA
-0.5
V
-1.2
V
-1
V
-
500
-
-
MHz
-
pF
Test Conditions
I
C
=-100uA
I
C
=-2mA
I
E
=-100uA
V
CB
=-35V
V
BE
=-6V
l
C
=-800mA, I
B
=-80mA
l
C
=-800mA, I
B
=-80mA
V
CE
=-1V, I
C
=-10mA
V
CE
=-1V, I
C
=-5mA
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-800mA
V
CE
=-10V, I
C
=-50mA, f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Classification Of h
FE
2
Rank
Range
C
120 ~ 200
D
160 ~ 300
E
250 ~ 500
G
I
8550
Page: 1/2
GTM [ GTM CORPORATION ]
