ISSUED DATE :2005/11/24
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
30
-
-
V
BVDSS
Tj
VGS=0, ID=250uA
Ϧ
BVDSS
/Ϧ
-
1.0
-
0.026
-
-
V/к
V
Reference to 25к, ID=1mA
VDS=VGS, ID=250uA
VDS=10V, ID=10A
VGS= ±20V
3.0
VGS(th)
gfs
Forward Transconductance
25
-
-
S
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
±100
nA
uA
uA
IGSS
-
-
1
VDS=30V, VGS=0
VDS=24V, VGS=0
VGS=10V, ID=20A
VGS=4.5V, ID=15A
IDSS
Drain-Source Leakage Current(Tj=175к)
-
-
250
-
-
12
25
-
Static Drain-Source On-Resistance2
mꢀ
RDS(ON)
-
-
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
-
11.6
3.9
7
Qg
Qgs
Qgd
Td(on)
Tr
ID=20A
nC
-
-
VDS=24V
VGS=4.5V
-
-
-
8.8
57.5
18.5
6.4
1135
200
135
-
V
DS=15V
ID=20A
GS=10V
-
-
ns
V
Turn-off Delay Time
Fall Time
-
-
Td(off)
Tf
RG=3.3ꢀ
RD=0.75ꢀ
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
Ciss
Coss
Crss
VGS=0V
pF
-
-
VDS=25V
f=1.0MHz
-
-
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
-
Max.
Unit
V
Test Conditions
-
1.3
VSD
IS=45A, VGS=0V
Reverse Recovery Time2
Trr
-
-
23.3
16
-
-
ns
IS=20A, VGS=0V
dI/dt=100A/ꢁs
Reverse Recovery Charge
Qrr
nC
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthЉ300us, duty cycleЉ2%.
G
I60T03
Page: 2/4
GTM [ GTM CORPORATION ]
