ISSUED DATE :2005/05/06
REVISED DATE :
G
I
5706
Description
Features
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
The G
I
5706 is designed high current switching applications.
*Large current capacitance
*Low collector-to-emitter saturation voltage
*High-speed switching
*High allowable power dissipation
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0.45
0.60
0.90
1.50
5.40
5.80
Absolute Maximum Ratings
(Ta = 25 :
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current(Pulse)
Base Current
Junction Temperature
Storage Temperature
Total Power Dissipation
,unless otherwise specified)
Symbol
Ratings
V
CBO
80
V
CES
80
V
CEO
50
V
EBO
6
I
C
5
I
CP
7.5
I
B
1.2
Tj
+150
Ts
TG
-55 ~ +150
P
D
0.8
P
D
(T
C
=25 : )
15
Unit
V
V
V
V
A
A
A
:
:
W
W
Electrical Characteristics
(Rating at Ta=25 : )
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)1
*V
CE(sat)2
*V
BE(sat)
*h
FE
fT
Cob
ton
(Turn-On Time)
tstg
(Storage Time)
tf
(Fall Time)
80
80
50
6
-
-
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
400
15
35
300
20
-
-
-
-
1
1
135
240
1.2
560
-
-
-
-
-
V
V
V
V
uA
uA
mV
mV
V
MHz
pF
ns
ns
ns
I
C
=10uA, I
E
=0
I
C
=100uA, R
BE
=0
I
C
=1mA, R
BE
=
I
E
=10uA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
l
C
=1A, I
B
=50mA
l
C
=2A, I
B
=100mA
l
C
=2A, I
B
=100mA
V
CE
=2V, I
C
=500mA
V
CE
=10V, I
C
=500mA
V
CB
=10V, f=1MHz
See specified test circuit.
See specified test circuit.
See specified test circuit.
G
I
5706
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