ISSUED DATE :2006/12/06
REVISED DATE :
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=55 : )
Symbol
BV
DSS
V
GS(th)
g
fs
I
GSS
I
DSS
Min.
-30
-1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
17
-
-
-
-
-
18.7
2.54
5.4
9
25
20
12
920
190
122
Max.
-
-2.4
-
±100
-1
-5
32
60
23
-
-
13
-
-
-
1100
-
-
Unit
V
V
S
nA
uA
uA
m
Test Conditions
V
GS
=0, I
D
=-250uA
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-5V, I
D
=-18A
V
GS
= ±20V
V
DS
=-30V, V
GS
=0
V
DS
=-24V, V
GS
=0
V
GS
=-10V, I
D
=-18A
V
GS
=-4.5V, I
D
=-10A
I
D
=-18A
V
DS
=-15V
V
GS
=-10V
V
DS
=-15V
V
GS
=-10V
R
G
=3
R
L
=0.82
V
GS
=0V
V
DS
=-15V
f=1.0MHz
Static Drain-Source On-Resistance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
nC
ns
pF
Source-Drain Diode
Parameter
Forward On Voltage
3
Continuous Source Current (
Body Diode
)
Symbol
V
SD
I
S
T
rr
Q
rr
Min.
-
-
-
-
Typ.
-
-
21.4
13
Max.
-1.0
-18
-
-
Unit
V
A
ns
nC
Test Conditions
I
S
=-1A, V
GS
=0V
V
D
= V
G
=0V, V
S
=-1.0V
I
S
=-18A, V
GS
=0V
dI/dt=100A/ s
Reverse Recovery Time
3
Reverse Recovery Charge
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 : , V
DD
=25V, L=0.1mH, R
G
=25 .
3. Pulse width 300us, duty cycle 2%.
G
I
405
Page: 2/4
GTM [ GTM CORPORATION ]
