ISSUED DATE :2004/12/15
REVISED DATE :2005/12/23B
G
I
127
PNP EPITAXIAL PLANAR T RANSISTOR
Description
The GI127 is designed for use in general purposes and low speed switching applications.
Features
&
DC current gain
High
&
Built-in
a damper diode at E-C
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0.45
0.60
0.90
1.50
5.40
5.80
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
(Tc=25 :
)
Symbol
Tj
Tstg
BVCBO
BVCEO
BVEBO
IC
PD
Ratings
+150
-55 ~ +150
-100
-100
-5
-5
20
ambient temperature unless otherwise specified)
Unit
:
:
V
V
V
A
W
Electrical Characteristics
(Rating at 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEX
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
Cob
Min.
-100
-100
-5
-
-
-
-
-
-
-
1
1
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-10
-10
-2
-2
-4
-4
-2.8
-
-
300
Unit
V
V
V
A
A
mA
V
V
V
V
K
K
pF
Test Conditions
I
C
=-1mA, I
E
=0
I
C
=-30mA, I
B
=0
I
E
=-1mA, I
C
=0
V
CB
=-100V, I
E
=0
V
CE
=-100V, V
BE(off)
=-1.5V
V
EB
=-5V, I
C
=0
I
C
=-3A, I
B
=-12mA
I
C
=-5A, I
B
=-20mA
I
C
=-5A, I
B
=-50mA
V
CE
=-3V, I
C
=-3A
V
CE
=-3V, I
C
=-500mA
V
CE
=-3V, I
C
=-3A
V
CB
=-10V, f=0.1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle 2%
GI127
Page: 1/2
GTM [ GTM CORPORATION ]
