ISSUED DATE :2005/01/05
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
600
-
-
V
BVDSS
Tj
VGS=0, ID=250uA
Ϧ
BVDSS
/Ϧ
-
2.0
-
0.6
-
-
V/к
V
Reference to 25к, ID=1mA
VDS=VGS, ID=250uA
VDS=10V, ID=1.6A
VGS= ±30V
4.0
VGS(th)
gfs
Forward Transconductance
2.0
-
-
S
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
±1
uA
uA
uA
ꢀ
IGSS
-
-
100
VDS=600V, VGS=0
VDS=480V, VGS=0
VGS=10V, ID=1.6A
IDSS
Drain-Source Leakage Current(Tj=150к)
Static Drain-Source On-Resistance
Total Gate Charge3
-
-
500
-
-
4.0
RDS(ON)
Qg
-
11.4
3.1
4.2
8.4
6
-
-
-
-
-
-
-
ID=3.3A
nC
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time3
Rise Time
-
VDS=480V
Qgs
VGS=10V
-
Qgd
-
Td(on)
Tr
Td(off)
Tf
VDD=300V
ID=3.3A
-
ns
VGS=10V
RG=10ꢀ
RD=91ꢀ
Turn-off Delay Time
-
17.7
5.9
600
45
4
Fall Time
-
Input Capacitance
-
Ciss
Coss
Crss
VGS=0V
pF
Output Capacitance
-
-
-
VDS=25V
f=1.0MHz
Reverse Transfer Capacitance
-
Source-Drain Diode
Parameter
Forward On Voltage3
Symbol Min.
Typ.
Max.
1.5
Unit
V
Test Conditions
-
-
-
-
VSD
IS=3.3A, VGS=0V, Tj=25к
Continuous Source Current (Body Diode
)
-
-
3.3
A
IS
VD=VG=0V, VS=1.5V
1
Pulsed Source Current (Body Diode
)
13.2
A
ISM
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25к, VDD=50V, L=15mH, RG=25ꢀ, IAS=3.3A.
3. Pulse widthЉ300us, duty cycleЉ2%.
G
I03N70
Page: 2/5
GTM [ GTM CORPORATION ]
