Pb Free Plating Product
ISSUED DATE :2005/11/03
REVISED DATE :
GE9971
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
60V
36m
25A
The GE9971 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications and suited for low
voltage applications such as DC/DC converters.
Description
*Simple Drive Requirement
*Low On-resistance
Features
Package Dimensions
REF.
A
b
c
D
E
L4
L5
Millimeter
Min.
Max.
4.40
4.80
0.76
1.00
0.36
0.50
8.60
9.00
9.80
10.4
14.7
15.3
6.20
6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
13.25
14.25
2.54 REF.
2.60
2.89
3.71
3.96
2.60
2.80
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@10V
Continuous Drain Current, V
GS
@10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
C
=25 :
I
D
@T
C
=100 :
I
DM
P
D
@T
C
=25 :
Tj, Tstg
Ratings
60
±20
25
16
80
39
0.31
-55 ~ +150
Unit
V
V
A
A
A
W
W/ :
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-c
Rthj-a
3.2
62
:
/W
: /W
GE9971
Page: 1/4
GTM [ GTM CORPORATION ]
