ISSUED DATE :2005/06/24
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
30
-
-
V
BVDSS
Tj
VGS(th)
gfs
VGS=0, ID=250uA
Ϧ
BVDSS
/Ϧ
V/к
V
-
1.0
-
0.035
-
-
Reference to 25к, ID=1mA
VDS=VGS, ID=250uA
VDS=10V, ID=43A
VGS= ̈́20V
3.0
Forward Transconductance
90
-
S
̈́100
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
-
nA
uA
uA
IGSS
-
-
1
25
4
5
-
VDS=30V, VGS=0
VDS=24V, VGS=0
VGS=10V, ID=43A
VGS=4.5V, ID=34A
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
-
3.2
4.5
100
10.5
60
mӨ
Static Drain-Source On-Resistance
RDS(ON)
-
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
-
Qg
Qgs
Qgd
Td(on)
Tr
ID=43A
VDS=24V
VGS=5V
nC
-
-
-
-
-
14
-
V
DS=15V
ID=43A
GS=10V
-
115
95
-
ns
V
Turn-off Delay Time
Fall Time
-
-
Td(off)
Tf
RG=3.3Ө
RD=0.35Ө
-
180
3830
1900
850
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
Ciss
Coss
Crss
VGS=0V
VDS=25V
f=1.0MHz
pF
-
-
-
-
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
Max.
1.3
Unit
V
Test Conditions
-
-
-
-
VSD
IS=85A, VGS=0V, Tj=25к
Continuous Source Current (Body Diode
)
-
-
85
A
IS
VD= VG=0V, VS=1.3V
1
Pulsed Source Current (Body Diode
)
360
A
ISM
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthЉ300us, duty cycleЉ2%.
GE90N03
Page: 2/5
GTM [ GTM CORPORATION ]
