ISSUED DATE :2005/08/30
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
400
-
-
V
BVDSS
Tj
VGS(th)
gfs
VGS=0, ID=1mA
Ϧ
BVDSS
/Ϧ
V/к
V
-
2.0
-
0.36
-
-
Reference to 25к, ID=1mA
VDS=VGS, ID=250uA
VDS=10V, ID=2.75A
VGS= ̈́30V
4.0
Forward Transconductance
30
-
-
S
̈́100
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
nA
uA
uA
Ө
IGSS
-
-
10
VDS=400V, VGS=0
VDS=320V, VGS=0
VGS=10V, ID=2.75A
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
100
Static Drain-Source On-Resistance
Total Gate Charge3
-
-
1
-
-
-
-
-
-
-
-
-
-
RDS(ON)
Qg
-
35
3.7
20
8
ID=5.5A
nC
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time3
Rise Time
-
VDS=320V
Qgs
VGS=10V
-
Qgd
-
Td(on)
Tr
Td(off)
Tf
VDD=200V
ID=5.5A
-
20
47
18
565
70
38
ns VGS=10V
RG=10Ө
Turn-off Delay Time
Fall Time
-
RD=36Ө
-
Input Capacitance
-
Ciss
Coss
Crss
VGS=0V
pF
Output Capacitance
Reverse Transfer Capacitance
-
VDS=25V
f=1.0MHz
-
Source-Drain Diode
Parameter
Forward On Voltage3
Symbol Min.
Typ.
Max.
1.5
5.5
23
Unit
V
Test Conditions
-
-
-
-
VSD
IS=5.5A, VGS=0V, Tj=25к
Continuous Source Current (Body Diode
)
-
-
A
IS
VD=VG=0V, VS=1.5V
1
Pulsed Source Current (Body Diode
)
A
ISM
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25к, VDD=50V, L=15mH, RG=25ꢀ, IAS=5.5A.
3. Pulse widthЉ300us, duty cycleЉ2%.
GE730
Page: 2/5
GTM [ GTM CORPORATION ]
