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GE2026 参数 Datasheet PDF下载

GE2026图片预览
型号: GE2026
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 3 页 / 385 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GE2026的Datasheet PDF文件第2页浏览型号GE2026的Datasheet PDF文件第3页  
ISSUED DATE :2005/09/05
REVISED DATE :
GE2026
Description
NP N E PITAX IAL PL ANAR T RANS ISTO R
The GE2026 is designed for general purpose application.
Features
&
Collector Saturation Voltage : V
CE (sat)
=1.0V (Max.) @ I
C
=2A, I
B
=0.2A,
Low
Package Dimensions
REF.
A
b
c
D
E
L4
L5
Millimeter
Min.
Max.
4.40
4.80
0.76
1.00
0.36
0.50
8.60
9.00
9.80
10.4
14.7
15.3
6.20
6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
13.25
14.25
2.54 REF.
2.60
2.89
3.71
3.96
2.60
2.80
Absolute Maximum Ratings
(T
A
=25 : )
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Total Device
Dissipation
Junction Temperature
Storage Temperature
T
A
=25 :
T
C
=25 :
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
P
D
T
J
T
stg
Ratings
60
60
7
3
0.5
2
20
150
-55 ~ +150
Unit
V
V
V
A
A
W
W
:
:
Electrical Characteristics
(T
A
= 25 : unless otherwise noted)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
fT
Cob
t
on
(Turn-on Time)
t
stg
(Storage Time)
t
f
(Fall Time)
Min.
60
60
7
-
-
-
-
100
20
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
30
35
0.65
1.3
0.65
Max.
-
-
-
100
100
1.0
1.0
320
-
-
-
-
-
-
*Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Unit
V
V
V
uA
uA
V
V
I
C
=100uA, I
E
=0
I
C
=50mA, I
B
=0
I
E
=100uA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=7V, I
C
=0
I
C
=2A, I
B
=0.2A
V
CE
=5V, I
C
=0.5A
V
CE
=5V, I
C
=0.5A
V
CE
=5V, I
C
=3A
MHz
pF
uS
V
CE
=5V, I
C
=0.5A
Test Conditions
V
CB
=10V, I
E
=0, f=1MHz
See specified test circuit
GE2026
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