ISSUED DATE :2006/01/19
REVISED DATE :
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol
BV
DSS
BV
DSS
/
Tj
Min.
-100
-
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.1
-
8
-
-
-
-
37
5
15
11
25
56
36
1180
250
75
3.6
Max.
-
-
-3.0
-
±100
-25
-100
210
60
-
-
-
-
-
-
1900
-
-
5
Unit
V
V/ :
V
S
nA
uA
uA
m
Test Conditions
V
GS
=0, I
D
=-1mA
Reference to 25 : , I
D
=-1mA
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-9A
V
GS
= ±20V
V
DS
=-100V, V
GS
=0
V
DS
=-80V, V
GS
=0
V
GS
=-10V, I
D
=-9A
I
D
=-9A
V
DS
=-80V
V
GS
=-10V
V
DS
=-50V
I
D
=-9A
V
GS
=-10V
R
G
=10
R
D
=5.6
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=
150 :
)
V
GS(th)
g
fs
I
GSS
I
DSS
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
R
g
Static Drain-Source On-Resistance
Total Gate Charge
2
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
nC
ns
pF
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
V
SD
T
rr
Q
rr
Min.
-
-
-
Typ.
-
95
410
Max.
-1.3
-
-
Unit
V
ns
nC
Test Conditions
I
S
=-9A, V
GS
=0V
I
S
=-9A, V
GS
=0V
dI/dt=100A/ s
Reverse Recovery Time
2
Reverse Recovery Charge
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GE15P10
Page: 2/4
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