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GE04N70B 参数 Datasheet PDF下载

GE04N70B图片预览
型号: GE04N70B
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 5 页 / 281 K
品牌: GTM [ GTM CORPORATION ]
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Pb Free Plating Product
ISSUED DATE :2005/01/04
REVISED DATE :
GE04N70B
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
650/700V
2.4
4A
The GE04N70B series are specially designed as main switching devices for universal 90~265VAC off-line
AC/DC converter applications. TO-220 type provide high blocking voltage to overcome voltage surge and sag
in the toughest power system with the best combination of fast switching, ruggedized design and
cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for
switch mode power supplies, DC-AC converters and high current high speed switching circuits.
*Simple Drive Requirement
*Dynamic dv/dt Rating
*Repetitive Avalanche Rated
*Fast Switching
Description
Features
Package Dimensions
REF.
A
b
c
D
E
L4
L5
Millimeter
Min.
Max.
4.40
4.80
0.76
1.00
0.36
0.50
8.60
9.00
9.80
10.4
14.7
15.3
6.20
6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
13.25
14.25
2.54 REF.
2.60
2.89
3.71
3.96
2.60
2.80
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current , V
GS
@10V
Continuous Drain Current , V
GS
@10V
Pulsed Drain Current
1,
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
Symbol
A/H
V
DS
V
GS
I
D
@T
C
=25 :
I
D
@T
C
=100 :
I
DM
P
D
@T
C
=25 :
E
AS
I
AR
E
AR
Tj, Tstg
Ratings
650/700
f 20
4
2.5
15
62.5
0.5
100
4
4
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
mJ
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
2.0
62
Unit
/W
/W
1/5