ISSUED DATE :2005/01/27
REVISED DATE :2005/12/12B
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol
BV
DSS
BV
DSS
/
Tj
Min.
600
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.6
-
0.8
-
-
-
-
13.9
1.9
8.2
8.8
10
21.3
8.8
155
27
14
Max.
-
-
4.0
-
±100
100
500
9.0
-
-
-
-
-
-
-
-
-
-
Unit
V
V/ :
V
S
nA
uA
uA
Test Conditions
V
GS
=0, I
D
=250uA
Reference to 25 : , I
D
=1mA
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=1A
V
GS
= ±20V
V
DS
=600V, V
GS
=0
V
DS
=480V, V
GS
=0
V
GS
=10V, I
D
=1A
I
D
=2A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=2A
V
GS
=10V
R
G
=10
R
D
=150
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=
150 :
)
V
GS(th)
g
fs
I
GSS
I
DSS
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nC
ns
pF
Source-Drain Diode
Parameter
Forward On Voltage
3
Symbol
V
SD
I
S
I
SM
1
Min.
-
-
-
Typ.
-
-
-
Max.
1.5
2
6
Unit
V
A
A
Test Conditions
I
S
=2A, V
GS
=0V, Tj=25 :
V
D
=V
G
=0V, V
S
=1.5V
Continuous Source Current (
Body Diode
)
Pulsed Source Current (
Body Diode
)
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 : , V
DD
=50V, L=100mH, R
G
=25 , I
AS
=2A.
3. Pulse width 300us, duty cycle 2%.
GE02N60
Page: 2/5
GTM [ GTM CORPORATION ]
