ISSUED DATE :2005/01/27
REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min.
600
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.6
-
0.8
-
-
-
7.2
7.7
1.5
2.6
8
5
14
7
286
25
5
Max.
-
-
4.0
-
D
100
100
500
8.0
-
-
-
-
-
-
-
-
-
-
pF
ns
nC
Unit
V
V/ :
V
S
nA
uA
uA
Ł
Test Conditions
V
GS
=0, I
D
=250uA
Reference to 25 : , I
D
=1mA
V
DS
=V
GS
, I
D
=250uA
V
DS
=50V, I
D
=0.8A
20V
V
GS
= D
V
DS
=600V, V
GS
=0
V
DS
=480V, V
GS
=0
V
GS
=10V, I
D
=0.8A
I
D
=1.6A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=1.6A
V
GS
=10V
R
G
=10 Ł
R
D
=187.5 Ł
V
GS
=0V
V
DS
=25V
f=1.0MHz
Symbol
BV
DSS
BV
DSS
/
Tj
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=
150 :
)
V
GS(th)
g
fs
I
GSS
I
DSS
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Parameter
Forward On Voltage
3
Symbol
V
SD
I
S
I
SM
1
Min.
-
-
-
Typ.
-
-
-
Max.
1.5
1.6
6
Unit
V
A
A
Test Conditions
I
S
=1.6A, V
GS
=0V, Tj=25 :
V
D
= V
G
=0V, V
S
=1.5V
Continuous Source Current (
Body Diode
)
Pulsed Source Current (
Body Diode
)
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 : , V
DD
=50V, L=10mH, R
G
=25 Ł , I
AS
=1.6A.
3. Pulse width 300us, duty cycle 2%.
GE01N60
Page: 2/5
GTM [ GTM CORPORATION ]
