ISSUED DATE :2004/09/20
REVISED DATE :
GD501SD
Description
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O LT A G E 4 5 V, C U R R E N T 0 . 1 A
Package Dimensions
The GD501SD is designed for low power rectification and high reliability.
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.85
1.05
0
0.10
0.80
1.00
1.15
1.45
1.60
1.80
2.30
2.70
REF.
L
b
c
Q1
Millimeter
Min.
Max.
0.20
0.25
0.10
0.40
0.40
0.18
0.15 BSC.
:
Parameter
Junction Temperature
Storage Temperature
Maximum Peak Repetitive Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
Maximum Average Forward Rectified Current
Total Power Dissipation
Symbol
Tj
Tstg
V
RRM
V
RMS
V
DC
I
FSM
C
J
Io
PD
Ratings
+125
-40 ~ +125
45
32
40
1.0
6.0
0.1
225
V
V
V
A
pF
A
mW
Unit
Characteristics
at Ta = 25 :
Symbol
V
F(1)
V
F(2)
IR
Max
0.55
0.34
30.0
Unit
V
V
uA
Test Condition
IF = 100mA
IF = 10 mA
VR = 10V
Characteristics
Maximum Instantaneous Forward Voltage
Maximum Instantaneous Forward Voltage
Maximum Average Reverse Current
2. ESD sensitive product handling required.
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 10.0 volt.
1/2
GTM [ GTM CORPORATION ]
