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GD1SS355 参数 Datasheet PDF下载

GD1SS355图片预览
型号: GD1SS355
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装,开关二极管 [SURFACE MOUNT,SWITCHING DIODE]
分类和应用: 二极管开关
文件页数/大小: 2 页 / 148 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GD1SS355的Datasheet PDF文件第2页  
ISSUED DATE :2004/09/20
REVISED DATE :
GD1SS355
Description
S U R F A C E M O U N T, S W I T C H I N G D I O D E
V O LT A G E 9 0 V, C U R R E N T 0 . 1 A
The GD1SS355 is designed for ultra high speed switching and high reliability with high surge current handling capability.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.85
1.05
0
0.10
0.80
1.00
1.15
1.45
1.60
1.80
2.30
2.70
REF.
L
b
c
Q1
Millimeter
Min.
Max.
0.20
0.25
0.10
0.40
0.40
0.18
0.15 BSC.
:
Parameter
Junction Temperature
Storage Temperature
Maximum Peak Repetitive Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
Maximum Reverse Recovery Time (Note2)
Maximum Average Forward Rectified Current
Total Power Dissipation
Symbol
Tj
Tstg
V
RRM
V
RMS
V
DC
I
FSM
C
J
T
RR
Io
PD
Ratings
+125
-55 ~ +125
90
63
80
0.5
3.0
4.0
0.1
225
V
V
V
A
pF
nSec
A
mW
Unit
Characteristics
at Ta = 25 :
Symbol
V
F
IR
Max
1.20
0.1
Unit
V
uA
Test Condition
IF = 100mA
VR = 80V
Characteristics
Maximum Instantaneous Forward Voltage
Maximum Average Reverse Current
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 6.0 volt.
2. Measured at applied forward current of 10mA and reverse voltage of 6.0 volt.
3. ESD sensitive product handling required.
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