GBC846
Description
Package Dimensions
1/2
NPN EPITAXIAL PLANAR TRANSISTOR
The GBC846 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits.
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
80
65
6
100
250
V
V
V
mA
mW
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VBE(on)1
VBE(on)2
hFE
fT
Cob
at Ta = 25 :
Min.
80
65
6
-
-
-
-
-
580
-
110
-
-
Typ.
-
-
-
-
90
200
700
900
-
-
-
300
3.5
Max.
-
-
-
15
250
600
-
-
700
770
800
-
6
MHz
pF
Unit
V
V
V
nA
mV
mV
mV
mV
mV
mV
IC=100uA
IC=1mA
IE=10uA
VCB=30V
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz, IE=0A
Test Conditions
GTM [ GTM CORPORATION ]
