1/2
G B AV 9 9
Description
The GBAV99 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is
designed for high-speed switching application in hybrid thick and thin-film circuits.
Package Dimensions
Style : Pin1.Anode 2.Cathode
3.Common Connection
Millimeter
Millimeter
REF.
REF.
Min.
Max.
Min.
Max.
A
2.70
3.10
G
1.90 REF.
B
2.40
2.80
H
1.00
1.30
C
1.40
1.60
K
0.10
0.20
D
0.35
0.50
J
0.40
-
E
0
0.10
L
0.85
1.15
0C
10 C
F
0.45
0.55
M
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Reverse Voltage
Repetitive Reverse Voltage
Forward Current
Repetitive Forward Current
Forward Surge Current(1ms)
Total Power Dissipation
Symbol
Tj
Tstg
Ratings
+150
-65~+150
70
70
150
500
1000
250
Unit
PD
V
V
mA
mA
mA
mW
Characteristics
Characteristic
at Ta = 25 :
Symbol
V(BR)
VF(1)
VF(2)
VF(3)
VF(4)
IR
CT
Trr
-
Min.
70
-
-
-
-
-
Max.
-
715
855
1000
1250
2.5
1.5
6
Unit
V
mV
mV
mV
mV
uA
pF
nS
IR=100uA
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=70V
VR=0, f=1MHz
IF=IR=10mA, RL=100 Ł measured at IR=1mA
Test Conditions
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
GTM [ GTM CORPORATION ]
