G B AV 7 0
Description
The GBAV70 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is
designed for high-speed switching application in hybrid thick and thin-film circuits.
1/3
Package Dimensions
Style : Pin1.Anode 2. Anode 3. Cathode
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF
.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Reverse Voltage
Forward Current
Repetitive Forward Current
Total Power Dissipation
Symbol
Tj
Tstg
Ratings
+150
-65~+150
80
200
500
225
Unit
PD
V
mA
mA
mW
Characteristics
Characteristic
at Ta = 25 :
Symbol
V(BR)
VF(1)
VF(2)
VF(3)
VF(4)
IR
CT
Trr
-
Min.
80
-
-
-
-
-
Max.
-
715
855
1100
1300
5
1.5
15
Unit
V
mV
mV
mV
mV
uA
pF
nS
IR=100uA
IF=1mA
IF=10mA
IF=50mA
IF=100mA
VR=80V
VR=0, f=1MHz
IF=IR=10mA, RL=100 Ł measured at
IR=1Ma,VR=5V
Test Conditions
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
GTM [ GTM CORPORATION ]
