ISSUED DATE :2005/05/26
REVISED DATE :
GB840
Description
Features
SCHOTTKY BARRIER DIODE
V O L T A G E 4 0 V, C U R R E N T 8 A R E C T I F I E R
The GB840 is designed for switching power supplies, converters, free wheeling and reverse battery protection
applications.
*Low forward voltage drop
*High frequency operation
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.20
2.80
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings at Ta=25 :
Parameters
DC Reverse Voltage
Working Peak Reverse Voltage
Average Forward Current
Surge Forward Current
Junction Temperature
Storage Temperature
Thermal Resistance, Junction to case
Symbol
V
R(RMS)
V
RWM
I
F
I
FSM
Tj
Tstg
R
JC
Ratings
40
40
8
380
-55 ~ +150
-55 ~ +175
5
Unit
V
V
A
A
Condition
50% duty cycle @T
C
=119 : , rectangular waveform
10ms Sine or 6ms Rect. pulse
: /W
Electrical Characteristics
Parameters
Reverse Voltage
Forward Voltage*
Reverse Current*
Junction Capacitance
Series Inductance
Note *: Pulse Width <300 s, Duty Cycle <2%.
Symbol
V
R
V
F
I
R
C
T
L
S
Ratings
Unit
Condition
min
typ
max
40
-
-
V I
R
=3mA, Tj=25 :
-
-
0.53
V I
F
=8A, Tj=25 :
-
-
2.0 mA V
R
=40V, Tj=25 :
VR=5V,Tj=25 :
-
-
900 pF (test signal range 100KHz~1MHz)
-
10.0
-
nH
Measure lead to lead 5mm form body
GB840
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GTM [ GTM CORPORATION ]
