ISSUED DATE :2003/11/11
REVISED DATE :2004/11/29B
G8551S
Description
Features
P N P E P I TA X I A L S I L I C O N T R A N S I S T O R
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
The G8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio
amplifier for portable radio and general purpose applications.
*Collector current up to 700mA
*Collector –Emitter voltage up to 20V
*Complimentary to G8051S
Package Dimensions
D
E
S1
TO-92
A
b1
S E A T IN G
PLANE
REF.
L
e1
e
b
C
A
S
1
b
b
1
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings
(Ta = 25 :
Parameter
,unless otherwise specified)
Ratings
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Junction Temperature
Storage Temperature Range
Total Power Dissipation
V
CBO
V
CEO
V
EBO
I
C
Tj
Ts
TG
PD
Typ.
-
-
-
-
-
100
-
-
-
-
10
,unless otherwise specified)
Max.
Unit
-
V
-
V
-
V
-1
uA
500
-
-0.5
V
-1
V
-1.0
V
-
MHz
-
pF
-25
-20
-5
-0.7
+150
-55 ~ +150
625
Test Conditions
I
C
=-10uA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-10uA,I
C
=0
V
CB
=-20V, I
E
=0
V
CE
=-1V,I
C
=-150mA
V
CE
=-1V,I
C
=-500mA
l
C
=-500mA,I
B
=-50mA
V
CE
=-1V,I
C
=-150mA
V
CE
=-1V,I
C
=-10mA
V
CE
=-10V,Ic=-20Ma, f=100MHz
V
CB
=-10V, I
E
=0A,f=1MHz
V
V
V
A
mW
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
1
h
FE
2
V
CE(sat)
V
BE(on)
V
BE
fT
Cob
Min.
-25
-20
-5
-
100
-
-
-
-
150
-
Classification Of h
FE
1
Rank
Range
C
100-180
D
160-300
E
280-500
G8551S
Page: 1/2
GTM [ GTM CORPORATION ]
