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G6718 参数 Datasheet PDF下载

G6718图片预览
型号: G6718
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 160 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号G6718的Datasheet PDF文件第2页  
ISSUED DATE :2005/09/05
REVISED DATE :
G6718
Description
Features
&
Power: 850mW
High
&
High
NP N EP ITAXI AL PL ANAR T RANSI STOR
The G6718 is designed for general purpose medium power amplifier and switching applications.
Current: 1A
Package Dimensions
D
E
S1
TO-92
A
S E A T IN G
PLANE
b1
L
REF.
A
S
1
b
b
1
C
e1
e
b
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150
1.390
2.42
2.66
Absolute Maximum Ratings
(T
A
=25 : )
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Total Device Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
D
T
J
T
stg
Ratings
100
100
5
1
2
200
850
150
-55 ~ +150
Unit
V
V
V
A
A
mA
mW
:
:
Electrical Characteristics
(T
A
= 25 : unless otherwise noted)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
*V
CE(sat)
*h
FE
1
*h
FE
2
*h
FE
3
fT
Cob
Min.
100
100
5
-
-
80
50
20
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
350
-
300
-
-
20
MHz
pF
Unit
V
V
V
nA
mV
I
C
=100uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=80V, I
E
=0
I
C
=350mA, I
B
=35mA
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=250mA
V
CE
=1V, I
C
=500mA
V
CE
=10V, I
E
=50mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
*Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Test Conditions
Classification Of h
FE
2
Rank
Range
A
50 ~ 115
B
95 ~ 300
1/2