CORPORATION
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=55 : )
ISSUED DATE :2007/01/15
REVISED DATE :
Symbol
BV
DSS
V
GS(th)
g
fs
I
GSS
I
DSS
Min.
-30
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
8.2
-
-
-
-
-
7
3.1
3
8.6
5
28.2
13.5
700
120
75
10
Max.
-
-3.0
-
±100
-1
-5
52
87
-
-
-
-
-
-
-
840
-
-
-
Unit
V
V
S
nA
uA
uA
m
Test Conditions
V
GS
=0, I
D
=-250uA
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-5V, I
D
=-4A
V
GS
= ±20V
V
DS
=-30V, V
GS
=0
V
DS
=-24V, V
GS
=0
V
GS
=-10V, I
D
=-4.1A
V
GS
=-4.5V, I
D
=-3.0A
I
D
=-4A
V
DS
=-15V
V
GS
=-4.5V
V
DS
=-15V
V
GS
=-10V
R
G
=3
R
L
=3.6
V
GS
=0V
V
DS
=-15V
f=1.0MHz
f=1.0MHz
Static Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
R
g
Symbol
V
SD
nC
ns
pF
Source-Drain Diode
Parameter
Forward On Voltage
2
2
Min.
-
-
-
-
Typ.
-
27
15
-
Max.
-1.0
-
-
-2.2
Unit
V
ns
nC
A
Test Conditions
I
S
=-1.0A, V
GS
=0V
I
S
=-4A, V
GS
=0V
dI/dt=100A/ s
V
D
=V
G
=0V, V
S
=-1.0V
Reverse Recovery Time
T
rr
Q
rr
I
S
Reverse Recovery Charge
Continuous Source Current (
Body Diode
)
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in copper pad of FR4 board; 270 : /W when mounted on Min. copper pad.
2
G3407
Page: 2/4
GTM [ GTM CORPORATION ]
