ISSUED DATE :2005/11/11
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
30
-
-
V
BVDSS
Tj
VGS=0, ID=250uA
Ϧ
BVDSS
/Ϧ
-
0.5
-
0.06
-
-
V/к
V
Reference to 25к, ID=1mA
VDS=VGS, ID=250uA
VDS=10V, ID=600mA
VGS= ±20V
2.0
VGS(th)
gfs
Forward Transconductance
600
-
-
mS
uA
uA
uA
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
±10
IGSS
-
-
1
VDS=30V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
100
VDS=24V, VGS=0
-
-
8
13
1.6
-
VGS=4V, ID=10mA
VGS=2.5V, ID=1mA
Static Drain-Source On-Resistance
ꢀ
RDS(ON)
-
-
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
-
1
Qg
Qgs
Qgd
Td(on)
Tr
ID=600mA
VDS=50V
VGS=4.5V
nC
-
0.5
0.5
12
10
56
29
32
8
-
-
-
-
V
DS=30V
ID=600mA
GS=10V
-
-
ns
V
Turn-off Delay Time
Fall Time
-
-
Td(off)
Tf
RG=3.3ꢀ
RD=52ꢀ
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
50
-
Ciss
Coss
Crss
VGS=0V
pF
-
VDS=25V
f=1.0MHz
-
6
-
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
Max.
Unit
Test Conditions
IS=1.2A, VGS=0V
-
-
1.2
V
VSD
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270к/W when mounted on Min. copper pad.
G3018K
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GTM [ GTM CORPORATION ]
