CORPORATION
G2SD655
Silico n NPN Epi ta xi al
Application
Low frequency power amplifier, Muting.
Package Dimensions
D
E
S1
ISSUED DATE :2004/05/24
REVISED DATE :2004/11/29B
TO-92
A
b1
S E A T IN G
PLANE
L
REF.
A
S
1
b
b
1
C
e1
e
b
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings
(Ta = 25 :
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Collect peak current
Junction Temperature
Storage Temperature Range
Total Power Dissipation
)
Ratings
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
Tj
Tstg
P
D
30
15
5
0.7
1.0
+150
-55 ~ +150
500
mW
Unit
V
V
V
A
A
Electrical Characteristics
(Ta = 25 :
Symbol
Min.
Typ.
)
Max.
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
V
BE
VCE(sat)
h
FE
1 *
1
fT
30
15
5
-
-
-
250
-
-
-
-
-
-
0.15
-
250
-
-
-
1.0
1.0
0.5
1200
-
V
V
V
uA
V
V
MHz
I
C
=10uA ,I
E
=0
I
C
=1mA,R
BE
=
I
E
=10uA,I
C
=0
V
CB
=20V, I
E=0
V
CE
=1V,I
C
=150mA
I
C
=500mA, I
B
=50mA *
2
V
CE
=1V, I
C
=150mA *
2
V
CE
=1V, I
C
=150mA
Notes: 1. The G2SD655 is grouped by h
FE
as follows.
2. Pulse test
Classification of Rank
Rank
Range
D
250-500
E
400-800
F
600-1200
G2SD655
Page: 1/3
GTM [ GTM CORPORATION ]
