CORPORATION
G2N5551
Description
Features
NP N E PITAX I AL PLANAR T RANSI STOR
ISSUED DATE :2004/06/09
REVISED DATE :2004/11/29B
The G2N5551 is designed for general purpose switching and amplifier applications.
*Complementary to PNP Type G2N5401
*High Collector – Emitter Breakdown Voltage (V
CEO
> 160V (@I
C
=1mA)
Package Dimensions
D
E
S1
TO-92
A
b1
S E A T IN G
PLANE
REF.
L
e1
e
b
C
A
S
1
b
b
1
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
P
D
Ratings
+150
-55 ~ +150
180
160
6
600
625
Max.
-
-
-
50
50
0.15
0.2
1
1
-
400
-
300
6
Unit
V
V
V
nA
nA
V
V
V
V
Test Conditions
I
C
=100uA , I
E
=0
I
C
=1mA,I
B
=0
I
E
=10uA ,I
C
=0
V
CB
=120V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
V
CE
=10V, I
C
=10mA, f=100MHz
V
CB
=10V, f=1MHz, I
E
=0
*
Pulse Test: Pulse Width 380us, Duty Cycle
2%
Unit
V
V
V
mA
mW
Characteristics
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE
(sat)1
*V
CE
(sat)2
*V
BE
(sat)1
*V
BE
(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
at Ta = 25 :
Min.
180
160
6
-
-
-
-
-
-
80
80
50
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
160
-
-
MHz
pF
Classification OF h
FE
2
Rank
Range
A
80-200
N
100-250
C
160-400
G2N5551
Page: 1/3
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