CORPORATION
G2N4403
Description
Features
P NP EP ITAXI AL P L ANAR TANSI STOR
The G2N4403 is designed for general purpose switching and amplifier applications.
ISSUED DATE :2004/04/23
REVISED DATE :2004/11/29B
*Complementary to G2N4401
*High Power Dissipation: 625mW at 25 :
*High DC Current Gain: 100-300 at 150mA
*High Breakdown Voltage: 40V Min
Package Dimensions
D
E
S1
TO-92
A
b1
S E A T IN G
PLANE
L
REF.
A
S
1
b
b
1
C
e1
e
b
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
VCEO
VEBO
Ratings
+150
-55 ~ +150
-40
-40
-5
-600
625
Unit
: ‡
: ‡
V
V
V
mA
mW
I
C
P
D
Characteristics
Symbol
BV
CBO
BV
CEO
BV
EBO
ICEX
*V
CE
(sat)1
*V
CE
(sat)2
*V
BE
(sat)1
*V
BE
(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
at Ta = 25 :
Min.
-40
-40
-5
-
-
-
-750
-
30
60
100
100
20
200
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-0.4
-750
-950
-1.3
-
-
-
300
-
-
8.5
MHz
pF
Unit
V
V
V
nA
V
mV
mV
V
I
C
=-100uA
I
C
=-1mA
I
E
=-10uA
V
CE
=-35V, V
BE
= -0.4V
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=-15mA
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-1V, I
B
=-0.1mA
V
CE
=-1V, I
C
=-1mA
V
CE
=-1V, I
C
=-10mA
V
CE
=-2V, I
C
=-150mA
V
CE
=-2V, I
C
=-500mA
V
CE
=-10V, I
C
=-20mA, f=100MHz
V
CB
=-10V, f=1MHz
* Pulse Test: Pulse Width
A
100-210
B
190-300
380us, Duty Cycle 2%
Test Conditions
Classification OF h
FE
4
Rank
Range
G2N4403
Page: 1/2
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