CORPORATION
G2N4401
Description
Features
NP N E PITAX I AL PLANAR T RANSI STOR
ISSUED DATE :2004/04/23
REVISED DATE :2004/11/29B
The G2N4401 is designed for general purpose switching and amplifier applications.
*Complementary to G2N4403
*High Power Dissipation: 625mW at 25
*High DC Current Gain: 100-300 at 150mA
*High Breakdown Voltage: 40V Min
Package Dimensions
D
E
S1
TO-92
A
b1
S E A T IN G
PLANE
REF.
L
e1
e
b
C
A
S
1
b
b
1
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
P
D
Ratings
+150
-55 ~ +150
60
40
5
600
625
V
V
V
mA
mW
Unit
Characteristics
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CE
X
*V
CE
(sat)1
*V
CE
(sat)2
*V
BE
(sat)1
*V
BE
(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Rank
Range
at Ta = 25 :
Min.
60
40
5
-
-
-
750
-
20
40
80
100
40
250
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
A
100-210
Max.
-
-
-
100
400
750
950
1.2
-
-
-
300
-
-
6.5
B
190-300
MHz
pF
Unit
V
V
V
nA
mV
mV
mV
V
I
C
=100uA
I
C
=1mA
I
E
=10uA
V
CE
=35V, V
BE
= 0.4V
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
B
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=150mA
V
CE
=2V, I
C
=500mA
V
CE
=10V, I
C
=20mA, f=100MHz
V
CB
=5V, f=1MHz
*
Pulse Test: Pulse Width 380us, Duty Cycle 2%
Test Conditions
Classification Of h
FE
4
G2N4401
Page: 1/2
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