ISSUED DATE :2005/05/16
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
-20
-
-
-
V
BVDSS
Tj
VGS(th)
gfs
VGS=0, ID=-250uA
Ϧ
BVDSS
/Ϧ
V/к
V
-0.01
-
Reference to 25к, ID=-1mA
VDS=VGS, ID=-250uA
VDS=-5V, ID=-2A
-
-
4.0
-
-1.2
Forward Transconductance
-
-
S
̈́100
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
nA
uA
uA
IGSS
VGS= ̈́12V
-
-
-1
VDS=-20V, VGS=0
VDS=-16V, VGS=0
VGS=-10V, ID=-2.8A
VGS=-4.5V, ID=-2.5A
VGS=-2.5V, ID=-2A
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
-25
-
-
120
Static Drain-Source On-Resistance2
mӨ
-
-
160
RDS(ON)
-
-
300
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
-
5
8
Qg
Qgs
Qgd
Td(on)
Tr
ID=-2A
VDS=-16V
VGS=-4.5V
nC
-
1
-
-
2
-
-
6
-
VDS=-10V
ID=-1A
-
17
16
5
-
ns VGS=-10V
RG=3.3Ө
Turn-off Delay Time
Fall Time
-
-
Td(off)
Tf
RD=10Ө
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
270
70
55
430
Ciss
Coss
Crss
VGS=0V
VDS=-20V
f=1.0MHz
pF
-
-
-
-
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
-
Max.
Unit
V
Test Conditions
-
-1.2
VSD
IS=-1.2A, VGS=0V
Reverse Recovery Time2
Trr
-
-
20
15
-
-
ns
IS=-2A, VGS=0V
dI/dt=100A/ꢀs
Reverse Recovery Charge
Qrr
nC
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, t Љ10sec; 270к/W when mounted on Min.
copper pad.
G2313
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