CORPORATION
Electrical Characteristics(Tj = 25
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
Unless otherwise specified)
Min.
-30
-
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.1
-
2
-
-
-
-
-
6.2
1.4
0.3
7.6
8.2
17.5
9
230
130.4
40
Max.
-
-
-
-
D
100
-1
-10
240
460
-
-
-
-
-
-
-
-
-
-
pF
ns
nC
Unit
V
V/ :
V
S
nA
uA
uA
mŁ
Test Conditions
V
GS
=0, I
D
=-250uA
Reference to 25 : , I
D
=-1mA
V
DS
= V
GS
, I
D
=-250uA
V
DS
=-10.0V,I
D
=-1.7A
V
GS
= D
20V
V
DS
=-30V, V
GS
=0
V
DS
=-30V, V
GS
=0
I
D
=-1.7A, V
GS
=-10V
I
D
=-1.3A, V
GS
=-4.5V
I
D
=-1.7A
V
DS
=-15V
V
GS
=-10V
V
DS
=-15V
I
D
=-1A
V
GS
=-10V
R
G
=6 Ł
R
D
=15 Ł
V
GS
=0V
V
DS
=-15V
f=1.0MHz
Symbol
BV
DSS
BV
DSS
/ Tj
V
GS(th)
gfs
I
GSS
I
DSS
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
Static Drain-Source On-Resistance
2
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
Source-Drain Diode
Forward On Voltage
2
Continuous Source Current(Body Diode)
Pulsed Source Current (Body Diode)
1
V
SD
I
S
I
SM
-
-
-
-
-
-
-1.2
-1
-10
V
A
A
I
S
=-1.25A, V
GS
=0 Tj=25 :
V
D
= V
G
=0V, V
S
=-1.2V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board;270 : /w when mounted on min. copper pad.
Characteristics Curve
2/4
GTM [ GTM CORPORATION ]
