ISSUED DATE :2006/07/26
REVISED DATE :2006/11/09B
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol
BV
DSS
BV
DSS
/
Tj
Min.
20
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.1
-
-
-
-
-
-
10
3.6
2
8
6
19
7
550
120
80
Max.
-
-
1.0
±100
1
25
28
38
-
-
-
-
-
-
-
-
-
-
Unit
V
V/ :
V
nA
uA
uA
m
Test Conditions
V
GS
=0, I
D
=250uA
Reference to 25 : , I
D
=1mA
V
DS
=V
GS
, I
D
=250uA
V
GS
= ±8V
V
DS
=20V, V
GS
=0
V
DS
=16V, V
GS
=0
V
GS
=4.5V, I
D
=6A
V
GS
=2.5V, I
D
=5.2A
I
D
=6A
V
DS
=10V
V
GS
=4.5V
V
DD
=10V
I
D
=1A
V
GS
=4.5V
R
G
=0.2
V
GS
=0V
V
DS
=15V
f=1.0MHz
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
V
GS(th)
I
GSS
I
DSS
Static Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
nC
ns
pF
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
V
SD
Min.
-
Typ.
0.7
Max.
1.3
Unit
V
Test Conditions
I
S
=1.25A, V
GS
=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t
10sec.
2/4
GTM [ GTM CORPORATION ]
