桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMA92 GMA93
CHARACTERISTICS
電特性
)
(T
A
=25
=25℃ unless otherwise noted
如無特殊說明，溫度爲
25℃)
Characteristic
Symbol
Min
特性參數
符號
最小值
■
ELECTRICAL
Max
最大值
—
—
—
__
—
-100
-250
-250
—
300
—
__
-0.5
-0.5
Unit
單�½�
Collector-Emitter Breakdown Voltage(3)
集電極-發射極擊穿電壓(Ic=-1.0mAdc,I
B
=0)
Collector-Base Breakdown Voltage
集電極-基極擊穿電壓(Ic=-100μAdc,I
E
=0)
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓(I
E
=-10μAdc,Ic=0)
Emitter Cutoff Current
發射截止電流
(V
EB
=-3.0Vdc,I
c
=0)
Collector Cutoff Current
集電極截止電流
(V
CB
=-200Vdc,I
E
=0)
(V
CB
=-160Vdc,I
E
=0)
DC Current Gain
直流電流增益
(I
c
=-1.0mAdc,V
CE
=-10.0Vdc)
(I
c
=-10mAdc,V
CE
=-10.0Vdc)
(I
c
=-30mAdc,V
CE
=-10.0Vdc)
Collector-Emitter Saturation Voltage
集電極-發射極�½和壓降
(I
c
=-20mAdc, I
B
=-2.0mAdc)
Base-Emitter Saturation Voltage
基極-發射極�½和壓降
(I
c
=-20mAdc, I
B
=-2.0mAdc)
Current-Gain-Bandwidth Product
電流增益-帶寬乘積
(I
c
=-10mAdc,V
CE
=-20Vdc,f=100MHz)
Collector-Base Capacitance
輸出電容
(V
CB
=-20.0Vdc, I
E
=0, f=1.0MHz)
１．FR-5=1.0×0.75×0.062in.
２．Alumina=0.4×0.3×0.024in.99.5%alumina.
３．Pulse
Width<300us;Duty Cycle<2.0%.
V
(BR)CEO
GMA92
GMA93
V
(BR)CBO
GMA92
GMA93
V
(BR)EBO
I
EBO
I
CBO
GMA92
GMA93
H
FE
-300
-200
-300
-200
-5.0
__
—
__
25
40
25
25
—
—
Vdc
Vdc
Vdc
nAdc
nAdc
—
GMA92
GMA93
V
CE(sat)
GMA92
GMA93
Vdc
V
BE(sat)
—
-0.9
Vdc
f
T
C
cb
GMA92
GMA93
50
—
__
__
6.0
8.0
MHz
pF
GSME [ GUILIN STRONG MICRO-ELECTRONICS CO., LTD. ]
