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GS82032AGT-166 参数 Datasheet PDF下载

GS82032AGT-166图片预览
型号: GS82032AGT-166
PDF下载: 下载PDF文件 查看货源
内容描述: 64K ×32的2Mb同步突发SRAM [64K x 32 2Mb Synchronous Burst SRAM]
分类和应用: 静态存储器
文件页数/大小: 22 页 / 579 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS82032AT-180/166/150/133/100/66/4/5/6  
Sleep Mode Timing  
tKH  
tKC  
tKL  
CK  
Setup  
Hold  
ADSP  
ADSC  
tZZR  
tZZS  
tZZH  
ZZ  
Application Tips  
Single and Dual Cycle Deselect  
SCD devices force the use of “dummy read cycles” (read cycles that are launched normally, but that are ended with the output  
drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance, but their use usually assures there  
will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste bandwidth on  
dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at bank address  
boundary crossings), but greater care must be exercised to avoid excessive bus contention.  
Rev: 1.12 10/2004  
17/22  
© 2000, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
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