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GS74104ATP-12I 参数 Datasheet PDF下载

GS74104ATP-12I图片预览
型号: GS74104ATP-12I
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×4 4Mb的异步SRAM [1M x 4 4Mb Asynchronous SRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 11 页 / 516 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS74104ATP/J  
Absolute Maximum Ratings  
Parameter  
Symbol  
Rating  
Unit  
Supply Voltage  
VDD  
–0.5 to +4.6  
V
–0.5 to V +0.5  
DD  
Input Voltage  
VIN  
V
(4.6 V max.)  
–0.5 to V +0.5  
DD  
Output Voltage  
VOUT  
V
(4.6 V max.)  
Allowable power dissipation  
Storage temperature  
PD  
0.7  
W
o
TSTG  
–55 to 150  
C
Note:  
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended  
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.  
Recommended Operating Conditions  
Parameter  
Supply Voltage for -8/-10/-12  
Input High Voltage  
Symbol  
Min  
3.0  
Typ  
3.3  
Max  
Unit  
V
3.6  
V
V
V
DD  
V
+0.3  
VIH  
VIL  
2.0  
DD  
Input Low Voltage  
–0.3  
0.8  
Ambient Temperature,  
Commercial Range  
o
TAc  
TAI  
0
70  
85  
C
Ambient Temperature,  
Industrial Range  
o
–40  
C
Notes:  
1. Input overshoot voltage should be less than V +2 V and not exceed 20 ns.  
DD  
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.  
Capacitance  
Parameter  
Input Capacitance  
Output Capacitance  
Symbol  
CIN  
Test Condition  
VIN = 0 V  
Max  
Unit  
pF  
5
7
COUT  
VOUT = 0 V  
pF  
Notes:  
1. Tested at TA = 25°C, f = 1 MHz  
2. These parameters are sampled and are not 100% tested.  
Rev: 1.06 6/2006  
3/11  
© 2001, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.