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GS73024AGB-8IT 参数 Datasheet PDF下载

GS73024AGB-8IT图片预览
型号: GS73024AGB-8IT
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 128KX24, 8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 13 页 / 648 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS73024AB
BGA
Commercial Temp
Industrial Temp
Features
• Fast access time: 8, 10, 12 ns
• CMOS low power operation: 250/200/170 mA at minimum
cycle time
• Single 3.3 V ± 0.3V power supply
• All inputs and outputs are TTL-compatible
• Fully static operation
• Industrial Temperature Option: –40 to 85°C
• Package
B: 14 mm x 22 mm, 119-bump, 1.27mm pitch BGA
GB: RoHS-compliant 119-bump BGA*
128K x 24
3Mb Asynchronous SRAM
119-Bump Ball Grid Array Package
8, 10, 12 ns
3.3 V V
DD
Center V
DD
and V
SS
Description
The GS73024A is a high speed CMOS Static RAM organized
as 131,072 words by 24 bits. Static design eliminates the need
for external clocks or timing strobes. Operating on a single
3.3 V power supply, and all inputs and outputs are
TTL-compatible. The GS73024A is available in a 119-bump
BGA package.
Pin Descriptions
Symbol
A
0
to A
16
WE
CE
V
DD
Description
Address input
Write enable input
Chip enable input
+3.3 V power supply
Symbol
DQ
1
to DQ
24
OE
V
SS
Description
Data input/output
Output enable input
Ground
*All GSI Technology packages are at least 5/6 RoHS compliant.
Packages listed with the additional “G” designator are 6/6 RoHS compliant.
Rev: 1.04b 3/2007
1/13
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.