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GS73024AB-10T 参数 Datasheet PDF下载

GS73024AB-10T图片预览
型号: GS73024AB-10T
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 128KX24, 10ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 637 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS73024AB
Read Cycle 2: WE = V
IH
t
RC
Address
t
AA
CE
t
AC
t
LZ
OE
t
OLZ
High impedance
t
OE
Data valid
t
HZ
t
OHZ
Data Out
Write Cycle
Parameter
Write cycle time
Address valid to end of write
Chip enable to end of write (CE)
Data set up time
Data hold time
Write pulse width
Address set up time
Write recovery time (WE)
Write recovery time ( CE )
Output Low Z from end of write
Write to output in High Z
* These parameters are sampled and are not 100% tested
Symbol
t
WC
t
AW
t
CW
t
DW
t
DH
t
WP
t
AS
t
WR
t
WR1
t
WLZ*
t
WHZ*
-8
Min
8
5.5
5.5
4
0
5.5
0
0
0
2
-10
Max
4
-12
Max
5
Min
10
7
7
5
0
7
0
0
0
3
Min
12
8
8
6
0
8
0
0
0
3
Max
6
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Rev: 1.03 12/2005
7/12
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.