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GS72108J-12 参数 Datasheet PDF下载

GS72108J-12图片预览
型号: GS72108J-12
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×8的2Mb SRAM的异步 [256K x 8 2Mb Asynchronous SRAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 354 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS72108TP/J
Truth Table
CE
H
L
L
L
Note: X: “H” or “L”
OE
X
L
X
H
WE
X
H
L
H
DQ
1
to DQ
8
Not Selected
Read
Write
High Z
V
DD
Current
ISB
1
, ISB
2
I
DD
Absolute Maximum Ratings
Parameter
Supply Voltage
Input Voltage
Output Voltage
Allowable power dissipation
Storage temperature
Symbol
V
DD
V
IN
V
OUT
PD
T
STG
Rating
–0.5
to +4.6
–0.5
to V
DD
+0.5
(≤ 4.6 V max.)
–0.5
to V
DD
+0.5
(≤ 4.6 V max.)
0.7
–55
to 150
Unit
V
V
V
W
o
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec-
ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.
Rev: 1.08 7/2002
3/12
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.