GS72108ATP
Read Cycle 2: WE = V
IH
t
RC
Address
t
AA
CE
t
AC
t
LZ
OE
t
OE
Data Out
t
OLZ
High impedance
D
ATA VALID
t
HZ
t
OHZ
Write Cycle
Parameter
Write cycle time
Address valid to end of write
Chip enable to end of write
Data set up time
Data hold time
Write pulse width
Address set up time
Write recovery time (WE)
Write recovery time (CE)
Output Low Z from end of write
Write to output in High Z
Symbol
tWC
tAW
tCW
tDW
tDH
tWP
tAS
tWR
tWR1
tWLZ
*
tWHZ
*
-7
Min
7
5
5
3.5
0
5
0
0
0
3
—
Max
—
—
—
—
—
—
—
—
—
—
3
Min
8
5.5
5.5
4
0
5.5
0
0
0
3
—
-8
Max
—
—
—
—
—
—
—
—
—
—
3.5
Min
10
7
7
5
0
7
0
0
0
3
—
-10
Max
—
—
—
—
—
—
—
—
—
—
4
Min
12
8
8
6
0
8
0
0
0
3
—
-12
Max
—
—
—
—
—
—
—
—
—
—
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
* These parameters are sampled and are not 100% tested.
Rev: 1.07a 4/2009
7/11
© 2001, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GSI [ GSI TECHNOLOGY ]
