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GS71116ATP-12 参数 Datasheet PDF下载

GS71116ATP-12图片预览
型号: GS71116ATP-12
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 64KX16, 12ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44]
分类和应用: 静态存储器光电二极管内存集成电路
文件页数/大小: 14 页 / 538 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS71116ATP/U
Absolute Maximum Ratings
Parameter
Supply Voltage
Input Voltage
Output Voltage
Allowable power dissipation
Storage temperature
Symbol
V
DD
V
IN
V
OUT
PD
T
STG
Rating
–0.5 to +4.6
–0.5 to V
DD
+0.5
(4.6 V max.)
–0.5 to V
DD
+0.5
(4.6 V max.)
0.7
–55 to 150
Unit
V
V
V
W
o
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage for -7/-8/-10/-12
Input High Voltage
Input Low Voltage
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
Symbol
V
DD
V
IH
V
IL
T
Ac
T
A
I
Min
3.0
2.0
–0.3
0
–40
Typ
3.3
Max
3.6
V
DD
+0.3
0.8
70
85
Unit
V
V
V
o
C
C
o
Notes:
1. Input overshoot voltage should be less than V
DD
+2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Capacitance
Parameter
Input Capacitance
Output Capacitance
Symbol
C
IN
C
OUT
Test Condition
V
IN
= 0 V
V
OUT
= 0 V
Max
5
7
Unit
pF
pF
Notes:
1. Tested at T
A
= 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
Rev: 1.10 3/2009
3/14
© 2001, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.