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GS70328TS-8 参数 Datasheet PDF下载

GS70328TS-8图片预览
型号: GS70328TS-8
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8 256Kb的SRAM的异步 [32K x 8 256Kb Asynchronous SRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 11 页 / 232 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS70328SJ/TS
Read Cycle 2: WE = V
IH
t
RC
Address
t
AA
CE
t
AC
t
LZ
OE
t
OE
Data Out
t
OLZ
High impedance
D
ATA VALID
t
HZ
t
OHZ
Write Cycle
Parameter
Write cycle time
Address valid to end of write
Chip enable to end of write
Data set up time
Data hold time
Write pulse width
Address set up time
Write recovery time (WE)
Write recovery time (CE)
Output Low Z from end of write
Write to output in High Z
Symbol
tWC
tAW
tCW
tDW
tDH
tWP
tAS
tWR
tWR1
tWLZ
*
tWHZ
*
-7
Min
7
5
5
3.5
0
5
0
0
0
2
Max
3
Min
8
5.5
5.5
4
0
5.5
0
0
0
2
-8
Max
3.5
Min
10
7
7
5
0
7
0
0
0
2
-10
Max
4
Min
12
10
10
7
0
10
0
0
0
3
-12
Max
5
Min
15
13
13
10
0
13
0
0
0
3
-15
Max
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
* These parameters are sampled and are not 100% tested
Rev: 1.11 11/2004
6/11
© 1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.