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GS70328TS-12I 参数 Datasheet PDF下载

GS70328TS-12I图片预览
型号: GS70328TS-12I
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8 256Kb的SRAM的异步 [32K x 8 256Kb Asynchronous SRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 11 页 / 232 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS70328SJ/TS
Power Supply Currents
Parameter Symbol
Test Conditions
CE
VIL
All other inputs
VIH or
VIL
Min. cycle time
IOUT = 0 mA
CE
VIH
All other inputs
VIH or
≤VIL
Min. cycle time
CE
V
DD
– 0.2 V
All other inputs
V
DD
– 0.2 V or
0.2 V
0 to 70°C
7 ns
8 ns
10 ns 12 ns 15 ns
7 ns
-40 to 85°C
8 ns
10 ns 12 ns 15 ns
Operating
Supply
Current
IDD
75 mA 65 mA 50 mA 50 mA 50 mA 80 mA 70 mA 55 mA 55 mA 55 mA
Standby
Current
ISB1
35 mA 30 mA 25 mA 25 mA 25 mA 40 mA 35 mA 30 mA 30 mA 30 mA
Standby
Current
ISB2
1 mA
2 mA
AC Test Conditions
Parameter
Input high level
Input low level
Input rise time
Input fall time
Input reference level
Output reference level
Output load
Conditions
V
IH
= 2.4 V
V
IL
= 0.4 V
tr = 1 V/ns
tf = 1 V/ns
1.4 V
1.4 V
Fig. 1& 2
Output Load 1
DQ
50Ω
VT = 1.4 V
30pF
1
Output Load 2
3.3 V
DQ
5pF
1
589Ω
434Ω
Notes:
1. Include scope and jig capacitance
2. Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted
3. Output load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
Rev: 1.11 11/2004
4/11
© 1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.