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GS70328SJ-8T 参数 Datasheet PDF下载

GS70328SJ-8T图片预览
型号: GS70328SJ-8T
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8 256Kb的SRAM的异步 [32K x 8 256Kb Asynchronous SRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 11 页 / 232 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS70328SJ/TS  
Block Diagram  
A0  
Row  
Decoder  
Memory Array  
Address  
Input  
Buffer  
Column  
Decoder  
A14  
CE  
WE  
OE  
I/O Buffer  
Control  
DQ8  
DQ1  
Truth Table  
VDD Current  
CE  
H
OE  
X
WE  
X
DQ1 to DQ8  
Not Selected  
Read  
ISB1, ISB2  
L
L
H
L
X
L
Write  
IDD  
L
H
H
High Z  
X: “H” or “L”  
Absolute Maximum Ratings  
Parameter  
Symbol  
Rating  
Unit  
Supply Voltage  
VDD  
–0.5 to +4.6  
V
–0.5 to V + 0.5  
DD  
Input Voltage  
VIN  
V
(4.6 V max.)  
–0.5 to V + 0.5  
DD  
Output Voltage  
VOUT  
V
(4.6 V max.)  
Allowable power dissipation  
Storage temperature  
PD  
0.7  
W
o
TSTG  
–55 to 150  
C
Note:  
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended  
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.  
Rev: 1.11 11/2004  
2/11  
© 1999, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
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