GS81284Z18/36B-250/200/167
119-Bump BGA
Commercial Temp
Industrial Temp
Features
• NBT (No Bus Turn Around) functionality allows zero wait
Read-Write-Read bus utilization; fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• User-configurable Pipeline and Flow Through mode
• ZQ mode pin for user-selectable high/low output drive
• IEEE 1149.1 JTAG-compatible Boundary Scan
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 8Mb, 16Mb, 36Mb and 72Mb devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 119-bump BGA package
• RoHS-compliant 119-bump BGA packages available
144Mb Pipelined and Flow Through
Synchronous NBT SRAM
250 MHz–167 MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
Because it is a synchronous device, address, data inputs, and
read/write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS81284Z18/36 may be configured by the user to operate
in Pipeline or Flow Through mode. Operating as a pipelined
synchronous device, in addition to the rising-edge-triggered
registers that capture input signals, the device incorporates a
rising edge triggered output register. For read cycles, pipelined
SRAM output data is temporarily stored by the edge-triggered
output register during the access cycle and then released to the
output drivers at the next rising edge of clock.
Functional Description
The GS81284Z18/36 is a 144Mbit Synchronous Static SRAM.
GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other
The GS81284Z18/36 is implemented with GSI's high
pipelined read/double late write or flow through read/single
performance CMOS technology and is available in a JEDEC-
late write SRAMs, allow utilization of all available bus
standard 119-bump BGA package.
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Parameter Synopsis
-250
Pipeline
3-1-1-1
t
KQ
(x18/x36)
tCycle
Curr (x18)
Curr (x36)
t
KQ
tCycle
Curr (x18)
Curr (x36)
2.5
4.0
480
550
6.5
6.5
370
405
-200
3.0
5.0
420
480
7.5
7.5
340
370
-167
3.4
6.0
385
430
8.0
8.0
330
360
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Flow Through
2-1-1-1
Rev: 1.02 7/2010
1/29
© 2007, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GSI [ GSI TECHNOLOGY ]
