Gunter Semiconductor GmbH GFC044
N Channel Power MOSFET with extremely low RDS(on)
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 175℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Extremely low Rds(on)
Mechanical Data:
D19
Dimension
Thickness:
Metallization:
Top :
4.32mm x 4.57mm
400 µm
:
Al
Backside :
CrNiAg / Au
Suggested Bonding Conditions:
Die Mounting: Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire:
20 mil Al
Absolute Maximum Rating
@Ta=25℃
Characteristics
Symbol
V(BR)DSS
RDS(ON)
Limit
60
Unit Test Conditions
GS
D
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
V
Ω
A
V
=0V, I =250
µΑ
GS
V
D
Α
0.028
41
=10V, I =25
Continuous Drain current ( in target package) ID@25℃
Continuous Drain current ( in target package) ID@100℃
VGS=10V
VGS=10V
29
A
Operation Junction
Tj
-55~175
-55~175
℃
℃
Storage Temperature
TSTR
Target Device: IRFZ44
TO-263AB
Pd
2
W
@Ta=25℃
Pd
83
W
@Tc=25℃
GSG [ GUNTER SENICONDUCTOR GMBH. ]