GEM_018,_031 QUAD SCR MODULES
VDRM VRRM
max repetitive reverse
and off-state blocking
voltage
IDRM IRRM
@ Tjmax
VL(RMS)
maximum suggested
RMS line voltage
V
code
Part Number
[V]
[mA]
[V]
GEM_018
GEM_027
12
16
1200
1600
400
500
50
1800
2200
2800
100
50
550
700
800
18
22
28
GEM_031
GEM_025
GEM_028
100
On-State Characteristics
Parameters
GEM_018 GEM_027 GEM_031 GEM_025 GEM_028
Conditions
Tj = Tjmax
Tj = Tjmax
Tj = 25°C
Tj = 25°C
TA = 40°C
Units
Threshold voltage
VT(TO)
1.0
0.80
600
0.9
0.65
300
700
739
1.0
0.33
300
1.0
0.72
300
1.1
0.40
300
V
On-state slope
resistance
r
T
mW
mA
mA
W
Holding current, max
IH
IL
Latching current, typ
Max power losses
1000
510
1000
777
1000
731
1000
777
PMAX
Triggering Characteristics
Parameters
GEM_018 GEM_027 GEM_031 GEM_025 GEM_028
Conditions
Units
V
VGT
IGT
Gate trigger voltage
Gate trigger current
3.5
150
10
2
3
200
10
2
2.5
250
15
4
3.5
300
10
2
2.5
250
15
4
Tj = 25°C, VD = 5V
Tj = 25°C, VD = 5V
Pulse width 1 ms
mA
W
Peak gate power
dissipation
Average gate power
dissipation
PGM
PG(AV)
IFGM
VFGM
VRGM
W
Peak gate current
3
3
8
3
8
A
Peak gate voltage
(forward)
Peak gate voltage
(reverse)
20
5
20
5
20
5
20
5
20
5
V
V
Switching Characteristics
Parameters
GEM_018 GEM_027 GEM_031 GEM_025 GEM_028
Conditions
Tj = Tjmax
Tj = Tjmax
Units
A/µs
V/µs
Critical rate of rise of
di/dt
200
500
200
500
400
200
500
400
on-state current
Critical rate of rise of
off-state voltage
dV/dt
1000
1000
Tj=Tjmax, IT=1000A
di/dt=-20A/µs
VR=50V
tq
Turn-off time, typ
200
200
200
200
200
µs
dV/dt=20V/µs
Document GEM_018,_031 QUAD SCR MODULEST002