3.3V Uniform Sector
Dual and Quad Serial Flash
CS# High To Standby Mode With Electronic Signature Read
CS# High To Next Command After Suspend
CS# High To Next Command After Reset (from read)
CS# High To Next Command After Reset (from program)
CS# High To Next Command After Reset (from erase)
Write Status Register Cycle Time
GD25Q80C
tRES2
tSUS
20
20
20
20
12
30
μs
us
tRST_R
tRST_P
tRST_E
tW
us
us
ms
ms
5
Byte Program Time( First Byte)
Additional Byte Program Time ( After First Byte)
Page Programming Time
tBP1
tBP2
tPP
30
2.5
0.6
45
50
12
us
us
ms
ms
s
2.4
tSE
Sector Erase Time(4K Bytes)
Block Erase Time(32K Bytes)
Block Erase Time(64K Bytes)
Chip Erase Time(GD25Q80C)
150/300(1)
0.3/0.7 (2)
0.5/0.8 (3)
10
tBE1
tBE2
tCE
0.15
0.25
4
s
s
Note:
1. Max Value 4KB tSE with<50K cycles is 150ms and >50K & <100k cycles is 300ms.
2. Max Value 32KB tBE with<50K cycles is 0.3s and >50K & <100k cycles is 0.7s.
3. Max Value 64KB tBE with<50K cycles is 0.5s and >50K & <100k cycles is 0.8s.
45
GILWAY [ GILWAY TECHNICAL LAMP ]
