MDS400
400 Watts Pk, 45 Volts, 32µs, 2%
Avionics 1030-1090 MHz
GENERAL DESCRIPTION
The MDS400 is a COMMON BASE transistor capable of providing 400 Watts
Peak, Pulsed, RF Output Power over the band 1030-1090 MHz. The transistor
includes double input prematching for full broadband capability. Gold
Metalization and Diffused Ballasting are used to provide high reliability and
supreme ruggedness.
CASE OUTLINE
55KT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces Collector to Emiter Voltage
BVebo Collector to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
1450 Watts
55 Volts
4.0 Volts
40 Amps
-40 to + 200
C
+ 200
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Po
Pin
Pg
h
VSWR
1
CHARACTERISTICS
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
TEST
CONDITIONS
F =1030/1090 MHz
Vcc = 45 Volts
Pulse Width = 32
s
Duty Factor = 2 %
At Rated Power
MIN
400
90
6.5
35
10:1
TYP
MAX
UNITS
Watts
Watts
dB
%
BVces
BVebo
H
fe
Rθjc
Collector to Emitter Breakdown
Emitter to Base Breakdown
Current Gain
Thermal Resistance
Ic = 50 mA
Ie = 30 mA
Vce = 5 V, Ic = 1 A
Tc = 25
o
C
55
3.5
10
0.12
Volts
Volts
o
C/W
Issue September 22, 1995
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
GHZTECH [ GHZ TECHNOLOGY ]
