LS509-PLID 参数 Datasheet PDF下载

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Supply Voltage

Power Dissipation

Operating Temperature Range

Storage Temperature Range

VALUE/UNITS

5 V DC

25 mW

-10°C to 40° C

-20°C to 70° C

A OUT

B IN

B OUT

R

E

GND

PIN CONNECTION

5

6

A IN

V

MIC

V

B

MPO

1

10

C OUT

CAUTION

CLASS 1 ESD SENSITIVITY

ELECTRICAL CHARACTERISTICS

V

P

- Pin voltage measured with conditions as shown in Test Circuit.

Positive current corresponds to current INTO the pin.

Negative current corresponds with current OUT of the pin.

Conditions: Frequency = 1 kHz, Temperature = 25°C, Supply Voltage V

B

= 1.3 V

PARAMETER

Amplifier Current

Transducer Current

Maximum Transducer Current

A Input Bias Voltage (pin 6)

A Input Bias Current (pin 6)

B Input Bias Current (pin 4)

A O/P Voltage Swing-Hi (pin 5)

A Output Swing-Lo (pin 5)

SYMBOL

I

AMP

I

TRANS

I

TRANS (MAX)

V

BIAS A

I

BIAS A

I

BIAS B

V

OH A

V

OL A

A

OL

V

SAT C

A

OUT

V

D

V

RE

R

MIC

R

E

IRN

THD

CONDITIONS

MIN

75

170

TYP

140

230

-

570

0

0

580

280

MAX

205

290

-

650

50

50

-

-

UNITS

µA

µA

mA

mV

nA

nA

mV

mV

V

P2

= 0 V

R

FA

= 1 M (Note 1)

V

IN

= 0.4 V DC, R

FA

=

∞

,

I

P5

= -10

µA

(Note 3)

I

IN

= +1µA, R

FA

=

∞

,

I

P5

= +10

µA

(Note 4)

R

L

= 1 kΩ, V

P2

= 0 V

(S2 = b) R

L

=

R

FB

= 1 M (Note 2)

2

500

-50

-50

200

200

A Open Loop Voltage Gain

C Output Sat. Voltage (pin 10)

A Output Current Capability (pin 5)

46

-

-

56

100

30

265

28.5

4

125

1

1

-

180

-

325

35.5

5

160

-

-

dB

mV

µA

mV

mV

kΩ

Ω

µVRMS

%

Diode Voltage Drop

Emitter Bias Voltage (pin 2)

On-chip Microphone Resistor

On-chip Emitter Resistor

Input Referred Noise

Harmonic Distortion

∞

,

(Note 5)

140

21.5

3

90

NFB 0.2 to10kHz at 12dB/Oct

V

OUT

= 500 mV

RMS

-

-

All parameters and switches remain as shown in Test Circuit unless otherwise stated in "Conditions" column

Notes

1.

I

BIAS A

= (V

P6

-V

P6[RFA = 1M]

)/1M

2.

I

BIAS B

= (V

P4

-V

P4 [RFB = 1M]

)/1M

3.

V

OH A

= (V

P5

-V

P5 [VIN = 0.4 VDC, RFA =

∞,

IP5

= -10µA]

)

4.

V

OL A

= (V

P5

-V

P5 [IIN = +1µA, RFA =

∞,

IP5

=+10µA]

)

V

)

5.

V

D

= (V

P10

[Id = +(1.5 x

ITRANS)]

- P10 [Id = +(0.5 x

ITRANS)]

510 - 12 - 08

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