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MBM29LV160TE-70 参数 Datasheet PDF下载

MBM29LV160TE-70图片预览
型号: MBM29LV160TE-70
PDF下载: 下载PDF文件 查看货源
内容描述: 16M ( 2M ×8 / 1M ×16 )位 [16M (2M X 8/1M X 16) BIT]
分类和应用:
文件页数/大小: 59 页 / 617 K
品牌: FUJITSU [ FUJITSU ]
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MBM29LV160TE/BE-70/90/12  
Notes: 1. Address bits A11 to A19 = X = “H” or “L” for all address commands except or Program Address (PA) and  
Sector Address (SA).  
2. Bus operations are defined in Tables 2 and 3.  
3. RA =Address of the memory location to be read.  
PA =Address of the memory location to be programmed. Addresses are latched on the falling edge of  
the WE pulse.  
SA =Address of the sector to be erased. The combination of A19, A18, A17, A16, A15, A14, A13, and A12 will  
uniquely select any sector.  
4. RD =Data read from location RA during read operation.  
PD =Data to be programmed at location PA. Data is latched on the rising edge of WE.  
5. SPA=Sector address to be protected. Set sector address (SA) and (A6, A1, A0) = (0, 1, 0).  
SD =Sector protection verify data. Output 01H at protected sector addressed and output 00H at  
unprotected sector addresses.  
6. The system should generate the following address patterns:  
Word Mode: 555H or 2AAH to addresses A0 to A10  
Byte Mode: AAAH or 555H to addresses A-1 to A10  
7. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.  
*1: This command is valid while Fast Mode.  
*2: This command is valid while RESET = VID.  
*3: The valid addresses are A6 to A0. The other addresses are “Don’t care”.  
*4: The data “00H” is also acceptable.  
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