MB95120MB Series
6. Flash Memory Program/Erase Characteristics
Value
Parameter
Condition
Unit
Remarks
Min
Typ
Max
Sector erase time
(4 Kbytes sector)
Excludes 00H programming
prior erasure.
⎯
0.2*1
0.5*1
0.5*2
s
s
Sector erase time
(16 Kbytes sector)
Excludes 00H programming
prior erasure.
⎯
7.5*2
Excludes system-level
overhead.
Byte programming time
Program/erase cycle
⎯
10000
4.5
32
⎯
⎯
3600
⎯
μs
cycle
V
⎯
Power supply voltage at
program/erase
5.5
Flash memory data retention
time
20*3
⎯
⎯
year Average TA = +85 °C
*1 : TA = + 25 °C, VCC = 5.0 V, 10000 cycles
*2 : TA = + 85 °C, VCC = 4.5 V, 10000 cycles
*3 : This value comes from the technology qualification (using Arrhenius equation to translate high temperature
measurements into normalized value at +85 °C) .
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